Ion Beam Modification for Si Photonics

Ion implantation has played a significant role in semiconductor device fabrication and is growing significance the of Si photonic devices. In this paper, recent progress growth characterization Ge quantum dots (QDs) for light-emitting devices reviewed, with focus on ion as synthetic tool. Light emissions from QDs are compared other optically active centers, such defects silicon oxide thin film materials, well rare-earth light emitters. Detection photonics performed via integration germanium elements into detector structures, which can also be achieved by implantation. Novel techniques to grow SiGe- SiGeSn-on-Si structure described along their application detectors operation short-wave infrared range.